| PART |
Description |
Maker |
| BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1105WR BF1105 BF1105R |
CONNECTOR
N-channel dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1212WR BF1212 BF1212R BF1212-2015 BF1212-15 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Quanzhou Jinmei Electro...
|
| BF1100 BF1100R |
Dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
|
| BF1101WR BF1101R BF1101 BF1101-2015 BF1101-15 |
N-channel dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1101 BF1101R BF1101R-215 BF1101WR |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2SK2276 |
Power F-MOS Fets - Silicon N-Channel MOS
|
Panasonic
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| 3SK199 E001702 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
